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VND920 датащи(PDF) 8 Page - STMicroelectronics |
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VND920 датащи(HTML) 8 Page - STMicroelectronics |
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8 / 26 page ![]() Electrical specifications VND920 8/26 Doc ID 7767 Rev 6 2.2 Thermal data EMAX Maximum switching energy (L = 0.25 mH; RL =0 Ω; Vbat =13.5 V; Tjstart = 150 °C; IL =45A) 355 mJ Ptot Power dissipation TC ≤ 25 °C 6.25 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature - 40 to 150 °C Tstg Storage temperature - 55 to 150 °C Table 3. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 4. Thermal data (per island) Symbol Parameter Value Unit Rthj-lead Thermal resistance junction-lead 20 °C/W Rthj-amb Thermal resistance junction-ambient (one chip ON) 60(1) 1. When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35 µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. 45(2) 2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. °C/W Rthj-amb Thermal resistance junction-ambient (two chips ON) 46(1) 32(2) °C/W Obsolete Product(s) - Obsolete Product(s) |
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