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VN9004AJ датащи(PDF) 5 Page - STMicroelectronics |
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VN9004AJ датащи(HTML) 5 Page - STMicroelectronics |
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5 / 42 page ![]() 2 Electrical specification Figure 3. Current and voltage conventions GADG1605171029PS VIN OUTPUT0 CS FaultRST SEn INPUT0 IIN ISEn IFR IGND VSENSE VOUT VCC VFn IS IOUT ISENSE VCC VSEn VFR Note: VFn = VOUTn - VCC during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the rating listed in Table 3. Absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Table 3. Absolute maximum ratings Symbol Parameter Value Unit VCC DC supply voltage 36 V -VCC Reverse DC supply voltage 0.3 VCCJS Maximum jump start voltage for single pulse short circuit protection 28 V -IGND DC reverse ground pin current 200 mA IOUT OUTPUT0 DC output current Internally limited A -IOUT Reverse DC output current 31 IIN INPUT0 DC input current -1 to 10 mA ISEn SEn DC input current -1 to 3 mA IFR FaultRST DC input current -1 to 10 mA ISENSE CS pin DC output current (VGND = VCC and VSENSE < 0 V) +10 mA CS pin DC output current in reverse (VCC < 0 V) -20 EMAX Maximum switching energy (single pulse) (TJstart = 150 °C) 75 mJ VESD Electrostatic discharge (JEDEC 22A-114F) • INPUT0 • CS • SEn, FaultRST • OUTPUT0 • VCC 2000 2000 2000 4000 4000 V VESD Charge device model (CDM-AEC-Q100-011) 750 V TJ Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C VN9004AJ Electrical specification DS12483 - Rev 5 page 5/42 |
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