6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MIN

MAX

UNIT

Supply voltage

±18

V

Input voltage

±VS

Output short-circuit (to ground)

Continuous

Operating temperature

–40

125

°C

Junction temperature

150

°C

Lead temperature (soldering, 10 s)

300

°C

Tstg

Storage temperature

–55

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

6.2 ESD Ratings

VALUE

UNIT

BUF634U in D (SOIC) Package

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

BUF634U in D (SOIC) Package

V(ESD)

Electrostatic discharge,

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

V

BUF634F in KC (TO-220) and KTT (TO-263) Packages

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS = (V+) – (V–)

Supply voltage

±2.25 (4.5)

±15 (30)

±18 (36)

V

TA

Operating temperature

-40

25

85

°C

6.4 Thermal Information

THERMAL METRIC(1)

BUF634

UNIT

D (SOIC)

KC (TO-220)

KTT (TO-263)

8 PINS

5 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

123

32.1

41.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

55

25.6

45

°C/W

RθJB

Junction-to-board thermal resistance

68

18.3

24.8

°C/W

ψJT

Junction-to-top characterization parameter

12

8.5

13.1

°C/W

ψJB

Junction-to-board characterization parameter

67

17.7

23.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

0.7

2.4

°C/W

(1)

For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

BUF634

SBOS030C – AUGUST 2000 – REVISED MARCH 2024

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