FSA636

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4

Figure 4. Suggested Configuration for 3 Lane C−PHY

D1

D2

D3

D4

D5

D6

D7

D8

D9

D10

D1B

D2B

D3B

D4B

D5B

D6B

D7B

D8B

D9B

D10B

D1A

D2A

D3A

D4A

D5A

D6A

D7A

D8A

D9A

D10A

/OE

SEL

GND

VCC

FSA 636

1A

1B

1C

2B

2C

2A

3B

3C

3A

AP

1.5V – 5.0V DC

1A

1B

2A

2B

2C

1C

3B

3A

3C

1A

1B

2A

2B

2C

1C

3B

3A

3C

TRUTH TABLE

SEL

/OE

Function

LOW

LOW

Dn = DnA

HIGH

LOW

Dn = DnB

X

HIGH

All Ports High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Min

Max

Unit

VCC

Supply Voltage

−0.5

6.0

V

VCNTRL

DC Input Voltage (/OE, SEL) (Note 1)

−0.5

VCC

V

VSW

DC Switch I/O Voltage (Note 1, 2)

−0.3

2.1

V

IIK

DC Input Diode Current

−50

mA

IOUT

DC Output Current

25

mA

TSTG

Storage Temperature

−65

+150

°C

ESD

Human Body Model, JEDEC: JESD22−A114

All Pins

2.0

kV

Charged Device Model, JEDEC: JESD22−C101

0.5

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed.

2. VSW refers to analog data switch paths.