6.9 Electrical Characteristics

all minimum and maximum specifications are at TA = –40°C to 125°C, VDD = 3.0 V to 5.5 V, INP = –1 V to +1 V, INN = 0 V,

and sinc3 filter with OSR = 256 (unless otherwise noted); typical values are at TA = 25°C, CLKIN = 20 MHz, VDD = 3.3 V

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ANALOG INPUT

RIN

Single-ended input resistance

INN = HGND

0.06

1

GΩ

RIND

Differential input resistance

0.06

1

GΩ

IIB

Input bias current

INP = INN = HGND; IIB = (IIBP + IIBN) / 2

–10

10

nA

IIO

Input offset current(1)

IIO = IIBP – IIBN

–5

±0.5

5

nA

CIN

Single-ended input capacitance

INN = HGND; fIN = 310 kHz, fCLKIN = 20

MHz

2

pF

CIND

Differential input capacitance

fIN = 310 kHz, fCLKIN = 20 MHz

2

pF

ACCURACY

EO

Offset error(1)

INP = INN = HGND, TA = 25°C

–0.3

±0.04

0.3

mV

TCEO

Offset error thermal drift(4)

–4

4

µV/°C

EG

Gain error

TA = 25°C

–0.2%

0.2%

TCEG

Gain error thermal drift(5)

–40

40

ppm/°C

DNL

Differential nonlinearity

Resolution: 16 bits

–0.99

0.99

LSB

INL

Integral nonlinearity

Differential measurement; Resolution: 16

bits

–4

4

LSB

Single-ended measurement; Resolution:

16 bits

–6

6

SNR

Signal-to-noise ratio

fIN = 1 kHz

80

84

dB

SINAD

Signal-to-noise + distortion

fIN = 1 kHz

77

84

dB

THD

Total harmonic distortion(3)

VIN = 2 VPP, fIN = 1 kHz

–93

–80

dB

SFDR

Spurious-free dynamic range

VIN = 2 VPP, fIN = 1 kHz

79

96

dB

CMRR

Common-mode rejection ratio

INP = INN, fIN = 0 Hz, VCM min ≤ VCM ≤

VCM max

–104

dB

INP = INN, fIN = 10 kHz, –0.5 V ≤ VIN ≤

0.5 V

–89

PSRR

Power-supply rejection ratio

VDD from 3.0 V to 5.5 V, at dc

–109

dB

INP = INN = HGND, VDD from 3.0 V to

5.5 V, 10 kHz / 100 mV ripple

–104

DIGITAL I/O

IIN

Input leakage current

GND ≤ VIN ≤ VDD

7

μA

CIN

Input capacitance

4

pF

VIH

High-level input voltage

0.7 × VDD

VDD + 0.3

V

VIL

Low-level input voltage

–0.3

0.3 × VDD

V

CLOAD

Output load capacitance

15

30

pF

VOH

High-level output voltage

IOH = –20 µA

VDD – 0.1

V

IOH = –4 mA

VDD – 0.4

VOL

Low-level output voltage

IOL = 20 µA

0.1

V

IOL = 4 mA

0.4

CMTI

Common-mode transient immunity

90

150

kV/μs

AMC3336

SBASA70 – APRIL 2021

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