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TS2012IQT датащи(PDF) 23 Page - STMicroelectronics |
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TS2012IQT датащи(HTML) 23 Page - STMicroelectronics |
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23 / 29 page ![]() DocID14236 Rev 2 23/29 TS2012 Application information 29 Another important parameter is the rated voltage of the capacitor. A 1 µF/6.3 V capacitor used at 5 V, loses about 50 % of its value. With a power supply voltage of 5 V, the decoupling value, instead of 1 µF, could be reduced to 0.5 µF. As CS has particular influence on the THD+N in the medium to high frequency region, this capacitor variation becomes decisive. In addition, less decoupling means higher overshoots which can be problematic if they reach the power supply AMR value (6 V). 4.6 Wakeup time (twu) When standby is released to set the device ON, there is typically a delay of 1 ms. The TS2012 has an internal digital delay that mutes the outputs and releases them after this delay time to avoid any pop noise. Note: The gain increases smoothly (see Figure 44) from the mute to the gain selected by the G1 and G0 pin (Section 4.2). 4.7 Shutdown time When the standby command is set, the time required to set the output stage to high impedance and to put the internal circuitry in shutdown mode, is typically 1 ms. This time is used to decrease the gain and avoid any pop noise during shutdown. Note: The gain decreases smoothly until the outputs are muted (see Figure 44). 4.8 Consumption in shutdown mode Between the shutdown pin and GND there is an internal 300 k Ω (±20 %) resistor. This resistor forces the TS2012 to be in shutdown when the shutdown input is left floating. However, this resistor also introduces additional shutdown power consumption if the shutdown pin voltage is not 0 V. For example, with a 0.4 V shutdown voltage pin, the following typical and maximum values respectively for each shutdown pin must be added to the standby current specified in Table 5 to Table 7: 0.4 V/300 k Ω = 1.3 µA and 0.4 V/240 kΩ = 1.66 µA. This current is provided by the external control device for standby pins. |
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