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MB85RC64TAPNF-G-AMERE2 датащи(PDF) 19 Page - RAMXEED LIMITED |
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MB85RC64TAPNF-G-AMERE2 датащи(HTML) 19 Page - RAMXEED LIMITED |
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19 / 41 page ![]() MB85RC64TA DS501-00044-5v1-E 19 NOTE ON USE • We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed. • During the access period from the start condition to the stop condition, keep the level of WP, A0, A1 and A2 pins to the “H” level or the “L” level. ESD AND LATCH-UP Test DUT Value ESD HBM (Human Body Model) JESD22-A114 compliant MB85RC64TAPNF-G-BDE1 MB85RC64TAPNF-G-BDERE1 MB85RC64TAPNF-G-AWE2 MB85RC64TAPNF-G-AWERE2 MB85RC64TAPNF-G-AME2 MB85RC64TAPNF-G-AMERE2 MB85RC64TAPN-G-AMEWE1 |2000 V| ESD CDM (Charged Device Model) JESD22-C101 compliant |1000 V| Latch-Up (C-V Method) Proprietary method |200 V| |
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