MB85R256F

10

DS501-00011-9v1-E



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : Total number of reading and writing defines the minimum value of endurance, as an FeRAM memory

operates with destructive readout mechanism.

*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values

are calculated by qualification results.



NOTES ON USE

We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.

Parameter

Symbol

Value

Unit

Min

Typ

Max

CE level hold time at power OFF

tpd

80





ns

CE level hold time at power ON

tpu

80





ns

Power supply rising time

tr

0.05



200

ms

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1012



Times/byte Operation Ambient Temperature TA   85 C

Data Retention*2

10



Years

Operation Ambient Temperature TA   85 C

95



Operation Ambient Temperature TA   55 C



200



Operation Ambient Temperature TA   35 C

tpd

tpu

tr

CE > VDD × 0.8*

CE : Don't care

CE > VDD × 0.8*

CE

CE

VDD

2.7 V

VIH (Min)

1.0 V

VIL (Max)

GND

VDD

2.7 V

VIH (Min)

1.0 V

VIL (Max)

GND

* : CE (Max) < VDD  0.5 V