BYT08P-400 datasheet(2/7 Pages) STMICROELECTRONICS

номер детали	BYT08P-400

подробное описание детали	FAST RECOVERY RECTIFIER DIODES

PDF	7 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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2 / 7 page

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF *

Forward voltage drop

Tj = 25

°CIF = 8 A

1.5

Tj = 100

°C

1.4

IR **

Reverse leakage

current

Tj = 25

°CVR = VRRM

µA

Tj = 100

°C

2.5

Pulse test : * tp = 380

µs, δ < 2%

** tp = 5 ms,

δ < 2%

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AC

Ins. TO-220AC

2.5

3.5

°C/W

THERMAL RESISTANCES

To evaluate the conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.024 IF

(RMS)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

trr

Tj = 25°C

IF = 1A VR = 30V dIF/dt = - 15A/

µs

IF = 0.5A IR = 1A Irr = 0.25A

RECOVERY CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

tIRM

M axim um rev er se

recovery time

dIF/dt = - 32 A/

µsVCC = 200 V

IF = 8 A

≤ 0.05 µH

Tj = 100°C

(see fig. 13)

dIF/dt = - 64 A/

µs

IRM

M axim um rev er se

recovery current

dIF/dt = - 32 A/

µs

2.2

dIF/dt = - 64 A/

µs

2.8

C =

VRP

VCC

Turn-off overvoltage

coefficient

Tj = 100°C

VCC = 60V

IF = IF(AV)

dIF/dt = - 30A/

µs

Lp = 1

µH

3.3

TURN-OFF SWITCHING CHARACTERISTICS

BYT08P-400 / BYT08PI-400

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