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V1.0

14/10/19

Complementary Silicon

Plastic Power Transistors

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Parameter

Symbol

Min.

Max.

Unit

OFF Characteristics

Collector - Emitter Breakdown Voltage (Note 1)

(Ic = 30mA, Ib = 0) TIP30A

TIP30C

V(br)ceo

60

100

-

V

Collector Cut-off Current

Vce = 30V, Ib = 0 TIP30A

Vce = 60V, Ib = 0 TIP30C

Iceo

-

0.3

0.3

mA

Collector Cut-off Current

Vce = 60V, Veb = 0 TIP30A

Vce = 100V, Veb = 0 TIP30C

Ices

0.2

0.2

mA

Emitter Cut-off Current

(Veb = 5V, Ic = 0)

Iebo

-

1

mA

ON Characteristics (Note 1)

DC Current Gain

(Vce = 4V, Ic = 0.2A)

(Vce = 4V, Ic = 1A)

hfe

40

15

75

-

Collector - Emitter Saturation Voltage

(Ic = 1A, Ib = 125mA)

Vce(sat)

-

0.7

V

Base - Emitter On Voltage

(Ic = 1A, Vce = 4V)

Vbe(on)

-

1.3

Dynamic Characteristics

Current Gain-Bandwidth Product (Note 2)

(Vce = 10V, Ic = 200mA, f = 1MHz)

fT

3

-

MHz

Small-Signal Current Gain

(Vce = 10V, Ic = 200mA, f = 1kHz)

hfe

20

-

-

Electrical Characteristics (Ta = 25°C unless otherwise specified)

(1) Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%

(2) fT = | hFE | ° fTest

Turn - On Time

Ic, Collector Current (A)

Switching Time Equivalent Circuit

Rb and Rc Varied to Obtain Desired Current Levels