BUV48CFI datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

TO -3

T O-218

ISOW ATT 218

Rthj-ca se

Thermal Resist ance Junction-case

Max

2.2

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Min .

Typ.

Max.

Unit

ICER

Collector Cut -of f Current

(RBE =10

Ω)

VCE = 1200 V

Tcase = 125

500

µA

ICES

Collector Cut -of f Current

(VBE =0)

VCE = 1200 V

Tcase = 125

500

µA

ICEO

Collector Cut -of f Current

(IB =0)

VCE =VCEO

1mA

IEBO

Emitt er Cut -off Current

(IC =0)

VEB =6 V

1mA

VCEO(SUS)

∗ Collector-Emitter Sustaining

Voltage (IB =0)

IC =100 mA

700

VCER(SUS)

∗ Collector-Emitter Sustaining

Voltage (RBE =10

Ω)

IC =0.5 A

Vcla mp = 1200 V

L= 2mH

1200

VCE(sat)

∗ Collector-Emitter Saturation

Voltage

IC =6 A

IB =1.5 A

IC =10 A

IB =4 A

1.5

VBE(s at)

∗ Base-Emitter Saturation

Voltage

IC =6 A

IB =1.5 A

IC =10 A

IB =4 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

RESISTIVE SWITCHING TIMES

Symb ol

Parameter

Test Cond ition s

Min .

Typ.

Max.

Unit

ton

Turn-on T ime

VCC = 250 V

IC =6 A

IB1 =-IB2 =1.5 A

0.5

µs

St orage Time

1.5

µs

Fall Time

0.2

0.7

µs

INDUCTIVE SWITCHING TIMES

Symb ol

Parameter

Test Cond ition s

Min .

Typ.

Max.

Unit

St orage Time

VCC = 250 V

IC =6 A

IB1 =-IB2 =1.5 A

µs

Fall Time

0.15

µs

St orage Time

VCC = 250 V

IC =6 A

IB1 =-IB2 =1.5 A

TC =125

µs

Fall Time

0.33

0.60

µs

BUX48C/BUV48C/BUV48CFI

2/6

BUV48CFI датащи(PDF) 2 Page - STMicroelectronics

BUV48CFI датащи(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL