2SD1662 datasheet(1/2 Pages) ISC

номер детали	2SD1662

подробное описание детали	Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Darlington Power Transistor

2SD1662

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 100V(Min)

·

Low Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ (IC= 15A)

APPLICATIONS

· Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current

1

A

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.25

℃

/W

Аналогичный номер детали - 2SD1662

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SD1662	164Kb / 3P	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS)
	2SD1662	135Kb / 4P	High Current Switching Applications
	2SD1662	135Kb / 4P	High Current Switching Applications

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Аналогичное описание - 2SD1662

производитель	номер детали	датащи	подробное описание детали
NEC	2SD1630	125Kb / 2P	NPN SILICON DARLINGTON POWER TRANSISTOR
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New Jersey Semi-Conduct...	TIP152	84Kb / 2P	Silicon NPN Darlington Power Transistor
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Inchange Semiconductor ...	2SD1072	259Kb / 2P	Silicon NPN Darlington Power Transistor
Inchange Semiconductor ...	2SD1124	260Kb / 2P	Silicon NPN Darlington Power Transistor

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Аналогичный номер детали - 2SD1662

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