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INA600F датащи(PDF) 6 Page - Texas Instruments |
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INA600F датащи(HTML) 6 Page - Texas Instruments |
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6 / 39 page ![]() 6.5 Electrical Characteristics - INA600A (continued) For VS = (V+) – (V–) = 2.7V to 40V (±1.35V to ±20V) at TA = 25°C, VREF = VS / 2, G = 1/5, RL = 10kΩ connected to VS / 2, VCM = (VIN+ + VIN–) / 2 = VS / 2, VIN = (VIN+ – VIN–) = 0V and VOUT = VS / 2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH Positive and negative rail headroom VS = 40V, VREF = VS, RL = 10kΩ to VMID 80 150 mV VOL VS = 40V, VREF = VS, RL = 2kΩ to VMID 400 650 mV CL Drive Load capacitance drive VO = 100mV step, Overshoot < 20% 200 pF ZO Closed-loop output impedance f = 10kHz 50 Ω ISC Short-circuit current VS = 40V ±50 mA FREQUENCY RESPONSE BW Bandwidth, –3dB VIN = 10mVpk-pk 225 kHz THD + N Total harmonic distortion + noise VS = 40V, VREF = 2.5V, VO = 5VPP, RL = 100kΩ ƒ = 1kHz, 80kHz measurement BW 0.03 % EMIRR Electro-magnetic interference rejection ratio f = 1GHz, VIN_EMIRR = 100mV, Differential Mode 125 dB SR Slew rate VS = 40V, VO = 1V step 0.32 V/µs tS Settling time To 0.1%, VS = 40V, VOUT_STEP = 1V, CL = 10pF 10 µs tS Settling time To 0.01%, VS = 40V, VOUT_STEP = 1V, CL = 10pF 16 µs tS Settling time To 0.1%, VS = 40V, VOUT_STEP = 5V, CL = 10pF 18 µs tS Settling time To 0.01%, VS = 40V, VOUT_STEP = 5V, CL = 10pF 24 µs Overload recovery VS = 2.7V, VIN– = 0V, VIN+ = 85V, and VREF = VS / 2 7.5 µs REFERENCE INPUT REF - VIN Input voltage range VS = 40V, VREF = VMID (V–) (V+) V REF - G Reference gain to output 1 V/V REF - GE Reference gain error(2) VS = 40V ±0.002 ±0.05 % POWER SUPPLY VS Power-supply voltage Dual-supply ±1.35 ±20 V IQ Quiescent current VS = 2.7V 50 µA IQ Quiescent current VS = 40V 65 90 µA VS = 40V TA = –40°C to 125°C 95 (1) Offset drifts are uncorrelated. (2) Minimum and maximum values are specified by characterization. 6.6 Electrical Characteristics - INA600B For VS = (V+) – (V–) = 2.7V to 40V (±1.35V to ±20V) at TA = 25°C, VREF = VS / 2, G = 1/10, RL = 10kΩ connected to VS / 2, VCM = (VIN+ + VIN–) / 2 = VS / 2, VIN = (VIN+ – VIN–) = 0V and VOUT = VS / 2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OFFSET VOSO Offset voltage, RTO VS = 2.7V and 40V TA = 25°C ±0.6 ±3.0 mV Offset voltage over T, RTO TA = –40°C to 125°C ±3.5 mV Offset temp drift, RTO(1) TA = –40°C to 125°C ±1.5 ±7 µV/°C PSRR Power-supply rejection ratio, RTO VS = 4V to 40V TA = 25°C 2.5 10 µV/V PSRR Power-supply rejection ratio, RTO VS = 2.7V to 40V TA = 25°C 3 15 µV/V INPUT IMPEDANCE RIN-DM Differential Resistance 2400 kΩ RIN-CM Common-mode Resistance 635 kΩ INA600 SBOSAM3A – JULY 2025 – REVISED AUGUST 2025 www.ti.com 6 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: INA600 |
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