LSK389 datasheet(1/2 Pages) LINEAR

номер детали	LSK389

подробное описание детали	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET

PDF	2 Pages

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производитель	LINEAR [Linear Integrated Systems]

домашняя страница	http://www.linearsystems.com

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Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

FEATURES

ULTRA LOW NOISE

en = 0.9nV/√Hz (typ)

TIGHT MATCHING

|VGS1-2| = 20mV max

HIGH BREAKDOWN VOLTAGE

BVGSS = 40V max

HIGH GAIN

Yfs = 20mS (typ)

LOW CAPACITANCE

25pF typ

IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

Operating Junction Temperature

-55 to +135 °C

Maximum Power Dissipation

Continuous Power Dissipation @ +125 °C

400mW

Maximum Currents

Gate Forward Current

IG(F) = 10mA

Maximum Voltages

Gate to Source

VGSS = 40V

Gate to Drain

VGDS = 40V

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

GS2

GS1

V

−

Differential Gate to Source Cutoff

Voltage

20

mV

VDS = 10V, ID = 1mA

DSS2

DSS1

I

Gate to Source Saturation Current Ratio

0.9

-

VDS = 10V, VGS = 0V

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

BVGSS

Gate to Source Breakdown Voltage

40

V

VDS = 0, ID = 100µA

VGS(OFF)

Gate to Source Pinch-off Voltage

0.15

2

V

VDS = 10V, ID = 0.1µA

LSK389A

2.6

6.5

LSK389B

6

12

IDSS

Drain to Source Saturation

Current

LSK389C

10

20

mA

VDS = 10V, VGS = 0

IGSS

Gate to Source Leakage Current

200

pA

VGS = -30V, VDS = 0

LSK389

ULTRA LOW NOISE

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Integrated Systems

*For equivalent single version, see LSK170 family.

1

2

3

4

8

7

6

5

SOIC-A

S1

D1

SS

G1

G2

SS

D2

S2

5

BOTTOM VIEW

TO-71

1

2

3

6

7

D1

G1

S1

S2

D2

G2

Аналогичный номер детали - LSK389

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	LSK389	403Kb / 7P	LC ARGUS LED Low current 3 mm T1 LED, Non Diffused
New Jersey Semi-Conduct...	LSK389	88Kb / 2P	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET
Micross Components	LSK389	574Kb / 1P	Linear Systems replaces discontinued Toshiba 2SK389 with LSK389
Linear Integrated Syste...	LSK389-A-SOIC-8	238Kb / 2P	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated Syste...	LSK389-A-SOIC-A8L	238Kb / 2P	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

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Аналогичное описание - LSK389

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Linear Integrated Syste...	LS843-5	32Kb / 2P	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components	2N3954	283Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	SST404_PDIP	282Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
	U402_TO-71	287Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
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	U406_TO-71	286Kb / 1P	Low Noise, Low Drift, Monolithic Dual N-Channel JFET
New Jersey Semi-Conduct...	LSK389	88Kb / 2P	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Syste...	LS843	327Kb / 2P	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
	LSK389	238Kb / 2P	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
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