BUV298V datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthc -h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heats ink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICER

Collect or Cut-off

Current (RBE =5

Ω)

VCE =VCEV

Tj =100

0.4

ICEV

Collect or Cut-off

Current (VBE =-5V)

VCE =VCEV

Tj =100

0.4

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(SUS) * Collector-Emitter

Sustaining Voltage

IC =0.2 A

L =25 mH

Vcla mp = 450 V

450

hFE

∗

DC Current G ain

IC =32 A

VCE =5 V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =32 A

IB =6.4 A

IC =32 A

IB =6.4 A

Tj =100

o C

0. 35

0.6

1.2

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =32 A

IB =6.4 A

IC =32 A

IB =6.4 A

Tj =100

o C

0.9

1.5

diC/dt

Rate of Rise of

On-stat e Collector

VCC =300 V

RC =0

tp =3

µs

IB1 =9.6 A

Tj =100

160

210

µs

VCE(3

µs)•• Collector-Emitter

Dynamic Voltage

VCC =300 V

RC =9.3

Ω

IB1 =9.6 A

Tj = 100

4.5

VCE(5

µs)•• Collector-Emitter

Dynamic Voltage

VCC =300 V

RC =9.3

Ω

IB1 =9.6 A

Tj = 100

2.5

St orage Time

Fall T ime

Cross-over T ime

IC =32 A

VCC =50 V

VBB =-5 V

RBB =0.39

Ω

Vcla mp = 450 V

IB1 =6.4 A

L= 78

µHTj =100 oC

3.2

0. 25

0.5

4.5

0.4

0.7

µs

VCEW

Maximum Collect or

Emitt er Volt age

Without Snubber

ICWoff =48 A

IB1 =6. 4 A

VBB =-5 V

VCC =50 V

L= 52

µHRBB =0.39 Ω

Tj = 125

450

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUV298V

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