BUT90 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.17

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 10

Ω)

VCE = VCEV

VCE = VCEV Tc = 100

o C

0.4

ICEV

Collector Cut-off

Current

VCE = VCEV VBE = -1.5V

VCE = VCEV VBE = -1.5V Tc = 100

0.2

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 7 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

L = 25 mH

125

VEB0

Emitter-Base Voltage

(IC = 0)

IE = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 35 A

IB = 1.75 A

IC = 70 A

IB = 7 A

Tc = 100

IC = 35 A

IB = 1.75 A

IC = 70 A

IB = 7 A

Tc = 100

0.55

0.8

0.75

1.2

0.9

1.2

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 35 A

IB = 1.75 A

IC = 70 A

IB = 7 A

Tc = 100

IC = 35 A

IB = 1.75 A

IC = 70 A

IB = 7 A

Tc = 100

1.45

1.65

1.3

1.8

1.4

RESISTIVE LOAD

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Rise Time

Storage Time

Fall Time

VCC = 100 V

IC = 70 A

IB1 = - IB2 = 7 A

tp = 30

µs

0.8

0.9

0.2

1.2

1.5

0.4

µs

Rise Time

Storage Time

Fall Time

VCC = 100 V

IC = 70 A

IB1 = - IB2 = 7 A

tp = 30

µs

Tc = 100

1.1

1.2

0.3

1.6

0.6

µs

INDUCTIVE LOAD

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Storage Time

Fall Time

VCC = 100 V

VClamp = 125 V

IC = 70 A

IB1 = - IB2 = 7 A

LC = 70

µH

1.25

0.16

0.3

µs

Storage Time

Fall Time

VCC = 100 V

VClamp = 125 V

IC = 70 A

IB1 = - IB2 = 7 A

LC = 70

µH

Tc = 100

o C

1.5

0.25

2.2

0.5

µs

* Pulsed : Pulse duration = 300

µs, duty cycle = 2%

BUT90

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