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CSD83325L датащи(PDF) 1 Page - Texas Instruments

номер детали CSD83325L
подробное описание детали  CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

CSD83325L датащи(HTML) 1 Page - Texas Instruments

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CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET
1 Features
• Common drain configuration
• Low-on resistance
• Small footprint of 2.2 mm × 1.15 mm
• Lead free
• RoHS compliant
• Halogen free
• Gate ESD protection
2 Applications
• Battery management
• Battery protection
3 Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small footprint and common drain configuration make
the device ideal for battery pack applications in small
handheld devices.
S1
S2
G1
G2
S1
S2
Top View
Gate 2
Source 2
Gate 1
Source 1
Configuration
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VS1S2
Source-to-Source Voltage
12
V
Qg
Gate Charge Total (4.5 V)
8.4
nC
Qgd
Gate Charge Gate-to-Drain
1.9
nC
RS1S2(on)
Source-to-Source On Resistance
VGS = 2.5 V
17.5
mΩ
VGS = 3.8 V
10.9
mΩ
VGS = 4.5 V
9.9
mΩ
VGS(th)
Threshold Voltage
1.0
V
Device Information(1)
DEVICE
QTY
MEDIA
PACKAGE
SHIP
CSD83325L
3000
7-Inch Reel
2.20-mm × 1.15-mm
Land Grid Array (LGA)
Package
Tape
and
Reel
CSD83325LT
250
(1)
For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VS1S2
Source-to-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±10
V
IS
Continuous Source Current(1)
8
A
ISM
Pulsed Source Current(2)
52
A
PD
Power Dissipation
2.3
W
V(ESD) Human-Body Model (HBM)
2000
V
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150
°C
(1)
Device operating at a temperature of 105°C.
(2)
Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty
cycle ≤ 1%.
VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
18
21
24
27
30
D007
TC = 25°C, ID = 5 A
TC = 125°C, ID = 5 A
RDS(on) vs VGS
Qg - Gate Charge (nC)
0
2
4
6
8
10
12
14
16
0
1
2
3
4
5
6
7
8
D004
IS1S2 = 5 A
VS1S2 = 6 V
Gate Charge
CSD83325L
SLPS494C – NOVEMBER 2014 – REVISED NOVEMBER 2023
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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