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CSD23382F4.B датащи(PDF) 7 Page - Texas Instruments

номер детали CSD23382F4.B
подробное описание детали  CSD23382F4 12-V P-Channel FemtoFET™ MOSFET
PDF  14 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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CSD23382F4.B датащи(HTML) 7 Page - Texas Instruments

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6 Device and Documentation Support
6.1 Trademarks
FemtoFET™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
6.3 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com
CSD23382F4
SLPS453E – MAY 2014 – REVISED JANUARY 2022
Copyright © 2022 Texas Instruments Incorporated
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