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CSD19505KCS датащи(PDF) 4 Page - Texas Instruments

номер детали CSD19505KCS
подробное описание детали  CSD19505KCS 80V N-Channel NexFET™ Power MOSFET
PDF  13 Pages
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домашняя страница  https://www.ti.com
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CSD19505KCS датащи(HTML) 4 Page - Texas Instruments

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4.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 4-1. Transient Thermal Impedance
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VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =8V
VGS =6V
G001
Figure 4-2. Saturation Characteristics
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
Figure 4-3. Transfer Characteristics
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Qg - Gate Charge (nC)
ID = 100A
VDS = 40V
G001
Figure 4-4. Gate Charge
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
Figure 4-5. Capacitance
CSD19505KCS
SLPS480C – JANUARY 2014 – REVISED APRIL 2024
www.ti.com
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