5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VCC

Supply voltage range

–0.5

7

V

IIK

Input clamp current(2)

VI < 0 or VI > VCC

± 20

mA

IOK

Output clamp current(2)

VO < 0 or VO > VCC

± 20

mA

IO

Continuous output drain current per output

VO = 0 to VCC

± 35

mA

IO

Continuous output source or sink current per output

VO = 0 to VCC

± 25

mA

Continuous current through VCC or GND

± 50

mA

TJ

Storage temperature

150

℃

Tstg

Storage temperature range

–65

150

℃

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

5.2 Recommended Operating Conditions(1)

TA = 25°C

TA = –55°C to

125°C

TA = –40°C to 85°C

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

VCC

Supply voltage

2

6

2

6

2

6

V

VIH

High-level input voltage

VCC = 2 V

1.5

1.5

1.5

V

VCC = 4.5 V

3.15

3.15

3.15

VCC = 6 V

4.2

4.2

4.2

VIL

Low-level input voltage

VCC = 2 V

0.5

0.5

0.5

V

VCC = 4.5 V

1.35

1.35

1.35

VCC = 6 V

1.8

1.8

1.8

VI

Input voltage

0

VCC

0

VCC

0

VCC

V

VO

Output voltage

0

VCC

0

VCC

0

VCC

V

tt

Input transition (rise and fall) time

VCC = 2 V

1000

1000

1000

ns

VCC = 4.5 V

500

500

500

VCC = 6 V

400

400

400

(1)

All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,

Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

5.3 Thermal Information

THERMAL METRIC

DW (SOIC)

N (PDIP)

UNIT

20 PINS

20 PINS

RθJA

Junction-to-ambient thermal resistance

(1)

109.1

84.6

°C/W

RθJC (top)

Junction-to-case (top) thermal resistance

76

72.5

°C/W

RθJB

Junction-to-board thermal resistance

77.6

65.3

°C/W

ΨJT

Junction-to-top characterization parameter

51.5

55.3

°C/W

ΨJB

Junction-to-board characterization parameter

77.1

65.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application

report.

CD54HC573, CD74HC573

SCLS454C – FEBRUARY 2001 – REVISED MAY 2022

www.ti.com

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