© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 4

1

Publication Order Number:

MPS650/D

NPN - MPS650, MPS651;

PNP - MPS750, MPS751

Amplifier Transistors

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MPS650; MPS750

MPS651; MPS751

VCE

40

60

Vdc

Collector−Base Voltage

MPS650; MPS750

MPS651; MPS751

VCB

60

80

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

IC

2.0

Adc

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD

625

5.0

mW

mW/°C

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

VCE

200

°C/W

Thermal Resistance, Junction−to−Case

VCB

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

COLLECTOR

3

2

BASE

1

EMITTER

NPN

PNP

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

AMPS

xxx

YWW G

G

xxx

= 650, 750, 651, or 751

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)