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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STF13NM50N датащи(PDF) 5 Page - STMicroelectronics |
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STF13NM50N датащи(HTML) 5 Page - STMicroelectronics |
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5 / 17 page  STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=250V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 17) 30 15 40 10 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, VDD=100V di/dt = 100A/µs,Tj=25°C (see Figure 19) 300 3 22 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A,VDD=100V di/dt=100A/µs,Tj=150°C (see Figure 19) 370 4 22 ns µC A |
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