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BUH1215 датащи(PDF) 4 Page - STMicroelectronics

номер детали BUH1215
подробное описание детали  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUH1215 датащи(HTML) 4 Page - STMicroelectronics

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Reverse Biased SOA
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100
oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistor to turn off (retrace phase).
Most
of
the
dissipation, especially in
the
deflection application, occurs at switch-off so it is
essential to determine the value of IB2 which
minimizes
power
losses,
fall
time
tf
and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB1 at 64 KHz scanning frequencies for
choosing the optimum negative drive. The test
circuit is illustrated in figure 1.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2 =
1
2
C
(VCEfly)2
ω= 2 πf =
1
√
L C
Where IC = operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
BUH1215
4/7



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