6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VCC

Supply voltage

–0.5

7

V

IIK

Input clamp current(2)

VI < –0.5 V or VI > VCC +

0.5 V

±20

mA

IOK

Output clamp current(2)

VI < –0.5 V or VI > VCC +

0.5 V

±20

mA

IO

Continuous output current

VO = 0 to VCC

±35

mA

ICC

Continuous current through VCC or GND

±70

mA

TJ

Junction temperature(3)

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3)

Guaranteed by design.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/

JEDEC JS-001(1)

±4000

V

Charged-device model (CDM), per JEDEC

specification JESD22-C101(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

5

6

V

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

TA

Ambient temperature

–55

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

SN74HCS03

UNIT

PW (TSSOP)

D (SOIC)

14 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

151.7

133.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

79.4

89

°C/W

RθJB

Junction-to-board thermal resistance

94.7

89.5

°C/W

ΨJT

Junction-to-top characterization parameter

25.2

45.5

°C/W

ΨJB

Junction-to-board characterization parameter

94.1

89.1

°C/W

SN74HCS03

SCLS777A – JUNE 2020 – REVISED OCTOBER 2020

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