BU806

BU807

MEDIUM VOLTAGE NPN FAST SWITCHING

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

NPN DARLINGTONS

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATION

s

HORIZONTAL DEFLECTION FOR

MONOCHROME TVs

DESCRIPTION

The devices are silicon Epitaxial Planar NPN

power transistors in Darlington configuration with

integrated base-emitter speed-up diode, mounted

in TO-220 plastic package.

They can be used in horizontal output stages of

110

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BU806

BU807

400

330

V

400

330

V

200

150

V

6

V

Collector Current

8

A

Collector Peak Current

15

A

Damper Diode Peak Forward Current

10

A

Base Current

2

A

60

W

Storage Temperature

-65 to 150

Max Operating Junction Temperature

150

1

2

3

TO-220

®

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