LPC660

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SNOS554D – MAY 1998 – REVISED MARCH 2013

LPC660 Low Power CMOS Quad Operational Amplifier

Check for Samples: LPC660

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FEATURES

DESCRIPTION

The LPC660 CMOS Quad operational amplifier is

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•

Rail-to-rail output swing

ideal for operation from a single supply. It features a

•

Micropower operation: (1 mW)

wide range of operating voltages from +5V to +15V

•

Specified for 100 k

Ω and 5 kΩ loads

and features rail-to-rail output swing in addition to an

input common-mode range that includes ground.

•

High voltage gain: 120 dB

Performance limitations that have plagued CMOS

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Low input offset voltage: 3 mV

amplifiers in the past are not a problem with this

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Low offset voltage drift: 1.3

μV/°C

design. Input VOS, drift, and broadband noise as well

as voltage gain (into 100 k

Ω and 5 kΩ) are all equal

•

Ultra low input bias current: 2 fA

to or better than widely accepted bipolar equivalents,

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Input common-mode includes V−

while the power supply requirement is typically less

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Operation range from +5V to +15V

than 1 mW.

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Low distortion: 0.01% at 1 kHz

This chip is built with National's advanced Double-

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Slew rate: 0.11 V/

μs

Poly Silicon-Gate CMOS process.

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Full military temp. range available

See the LPC662 datasheet for a Dual CMOS

operational amplifier and LPC661 datasheet for a

APPLICATIONS

single CMOS operational amplifier with these same

features.

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High-impedance buffer

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Precision current-to-voltage converter

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Long-term integrator

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High-impedance preamplifier

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Active filter

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Sample-and-Hold circuit

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Peak detector

Application Circuit

Oscillator frequency is determined by R1, R2, C1, and C2:

fOSC = 1/2πRC

where R = R1 = R2 and C = C1 = C2.

Figure 1. Sine-Wave Oscillator

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PRODUCTION DATA information is current as of publication date.

Copyright © 1998–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.