LM20144

SNVS529G – OCTOBER 2007 – REVISED MARCH 2013

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ELECTRICAL CHARACTERISTICS

Unless otherwise stated, the following conditions apply: AVIN = PVIN = VIN = 5V. Limits in standard type are for TJ = 25°C

only, limits in bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits

are specified by test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C,

and are provided for reference purposes only.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VFB

Feedback pin voltage

VIN = 2.95V to 5.5V

0.788

0.8

0.812

V

ΔVOUT/ΔIOUT

Load Regulation

IOUT = 100 mA to 4A

0.08

%/A

ICL

Switch Current Limit Threshold

VIN = 3.3V

5.4

6.0

6.6

A

RDS_ON

High-Side Switch On Resistance

ISW = 3.5A

36

55

m

Ω

RDS_ON

Low-Side Switch On Resistance

ISW = 3.5A

32

52

m

Ω

IQ

Operating Quiescent Current

Non-switching, VFB = VCOMP

3.5

6

mA

ISD

Shutdown Quiescent current

VEN = 0V

90

180

µA

VUVLO

VIN Under Voltage Lockout

Rising VIN

2.45

2.7

2.95

V

VUVLO_HYS

VIN Under Voltage Lockout Hysteresis

Falling VIN

45

100

mV

VVcc

VCC Voltage

IVCC = 0 µA

2.45

2.7

2.95

V

ISS

Soft-Start Pin Source Current

VSS/TRK = 0V

2

4.5

7

µA

VTRACK

SS/TRK Accuracy, VSS - VFB

VSS/TRK = 0.4V

-10

3

15

mV

Oscillator

FOSCH

Oscillator Frequency

RT = 49.9 kΩ

1350

1500

1650

kHz

FOSCL

Oscillator Frequency

RT = 249 kΩ

440

500

560

kHz

DCMAX

Maximum Duty Cycle

ILOAD = 0A

85

%

TON_TIME

Minimum On Time

100

ns

TCL_BLANK

Current Sense Blanking Time

After Rising VSW

80

ns

Error Amplifier and Modulator

IFB

Feedback pin bias current

VFB = 0.8V

1

100

nA

ICOMP_SRC

COMP Output Source Current

VFB = VCOMP = 0.6V

80

100

µA

ICOMP_SNK

COMP Output Sink Current

VFB = 1.0V, VCOMP = 0.6V

80

100

µA

gm

Error Amplifier Transconductance

ICOMP = ± 50 µA

450

510

600

µmho

AVOL

Error Amplifier Voltage Gain

2000

V/V

Power Good

VOVP

Over Voltage Protection Rising Threshold

105

108

111

%

With respect to VFB

VOVP_HYS

Over Voltage Protection Hysteresis

2

3

%

VPGTH

PGOOD Rising Threshold

92

94

96

%

With respect to VFB

VPGHYS

PGOOD Falling Hysteresis

2

3

%

TPGOOD

PGOOD deglitch time

16

µs

IOL

PGOOD Low Sink Current

VPGOOD = 0.4V

0.6

1

mA

IOH

PGOOD High Leakage Current

VPGOOD = 5V

5

100

nA

Enable

VIH_EN

EN Pin turn-on Threshold

VEN Rising

1.08

1.18

1.28

V

VEN_HYS

EN Pin Hysteresis

66

mV

Thermal Shutdown

TSD

Thermal Shutdown

160

°C

TSD_HYS

Thermal Shutdown Hysteresis

10

°C

Thermal Resistance

θJA

Junction to Ambient

See(1)

38

°C/W

θJC

Junction to Case

See(2)

3.5

(1)

On JEDEC 4–Layer test board (JESD51-7) with eight (8) thermal vias.

(2)

θJC refers to center of the Exposed Pad on the bottom of the package as the Case.

4

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