5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = –250 μA

–12

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = –9.6 V

–50

nA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = –5 V

–25

nA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = –250 μA

–0.40

–0.65

–0.95

V

RDS(on)

Drain-to-source on-resistance

VGS = –1.5 V, IDS = –0.1 A

230

399

mΩ

VGS = –1.8 V, IDS = –0.4 A

180

250

VGS = –2.5 V, IDS = –0.4 A

129

165

VGS = –4.5 V, IDS = –0.4 A

97

116

gfs

Transconductance

VDS = –1.2 V, IDS = –0.4 A

3

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = –6 V,

ƒ = 1 MHz

180

234

pF

Coss

Output capacitance

73

95

pF

Crss

Reverse transfer Capacitance

8.5

11.1

pF

RG

Series gate resistance

9

Ω

Qg

Gate charge total (4.5 V)

VDS = –6 V, IDS = –0.4 A

0.95

1.23

nC

Qgd

Gate charge gate-to-drain

0.068

nC

Qgs

Gate charge gate-to-source

0.30

nC

Qg(th)

Gate charge at Vth

0.15

nC

Qoss

Output charge

VDS = –6 V, VGS = 0 V

1.07

nC

td(on)

Turnon delay time

VDS = –6 V, VGS = –4.5 V,

IDS = –0.4 A, RG = 0 Ω

8

ns

tr

Rise time

4

ns

td(off)

Turnoff delay time

21

ns

tf

Fall time

8

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = –0.4 A, VGS = 0 V

–0.73

–1.0

V

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

90

°C/W

Junction-to-ambient thermal resistance(2)

255

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD23280F3

SLPS601B – APRIL 2016 – REVISED FEBRUARY 2022

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