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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD19535KCS датащи(PDF) 3 Page - Texas Instruments |
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CSD19535KCS датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 80V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 2.2 2.7 3.4 V RDS(on) Drain-to-Source On-Resistance VGS = 6V, ID = 100A 3.4 4.4 mΩ VGS = 10V, ID = 100A 3.1 3.6 mΩ gfs Transconductance VDS = 10V, ID = 100A 274 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 50V, ƒ = 1MHz 6100 7930 pF Coss Output Capacitance 1160 1500 pF Crss Reverse Transfer Capacitance 29 38 pF RG Series Gate Resistance 1.4 2.8 Ω Qg Gate Charge Total (10V) VDS = 50V, ID = 100A 78 101 nC Qgd Gate Charge Gate to Drain 13 nC Qgs Gate Charge Gate to Source 25 nC Qg(th) Gate Charge at Vth 16 nC Qoss Output Charge VDS = 40V, VGS = 0V 196 nC td(on) Turn On Delay Time VDS = 50V, VGS = 10V, IDS = 100A, RG = 0Ω 32 ns tr Rise Time 15 ns td(off) Turn Off Delay Time 60 ns tf Fall Time 5 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.9 1.1 V Qrr Reverse Recovery Charge VDS= 50V, IF = 100A, di/dt = 300A/μs 421 nC trr Reverse Recovery Time 89 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.5 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD19535KCS SLPS484C – JANUARY 2014 – REVISED MAY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD19535KCS |
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