4 Specifications

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

80

V

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 64V

1

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

nA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

2.1

2.5

3.2

V

RDS(on)

Drain-to-Source On-Resistance

VGS = 6V, ID = 100A

2.2

2.8

mΩ

VGS = 10V, ID = 100A

2.0

2.3

mΩ

gfs

Transconductance

VDS = 8V, ID = 100A

297

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 40V, ƒ = 1MHz

9380

12200

pF

Coss

Output Capacitance

2260

2940

pF

Crss

Reverse Transfer Capacitance

42

55

pF

RG

Series Gate Resistance

1.3

2.6

Ω

Qg

Gate Charge Total (10V)

VDS = 40V, ID = 100A

120

156

nC

Qgd

Gate Charge Gate to Drain

20

nC

Qgs

Gate Charge Gate to Source

37

nC

Qg(th)

Gate Charge at Vth

25

nC

Qoss

Output Charge

VDS = 40V, VGS = 0V

345

nC

td(on)

Turn On Delay Time

VDS = 40V, VGS = 10V,

IDS = 100A, RG = 0Ω

19

ns

tr

Rise Time

11

ns

td(off)

Turn Off Delay Time

30

ns

tf

Fall Time

10

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 100A, VGS = 0V

0.9

1.1

V

Qrr

Reverse Recovery Charge

VDS= 40V, IF = 100A,

di/dt = 300A/μs

525

nC

trr

Reverse Recovery Time

107

ns

4.2 Thermal Information

(TA = 25°C unless otherwise stated)(1)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.4

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

62

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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CSD19506KCS

SLPS481C – DECEMBER 2013 – REVISED MAY 2024

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