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CSD16401Q5.B датащи(PDF) 7 Page - Texas Instruments

номер детали CSD16401Q5.B
подробное описание детали  CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET
PDF  15 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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CSD16401Q5.B датащи(HTML) 7 Page - Texas Instruments

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6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
6.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
6.3 Trademarks
NexFET™ and TI E2E™ are trademarks of Texas Instruments.
All trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
6.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com
CSD16401Q5
SLPS200D – JANUARY 2018 – REVISED OCTOBER 2023
Copyright © 2023 Texas Instruments Incorporated
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