VDG−03177

C12

22

µF

C14

22

µF

C15

47

µF

C16

470

µF

C17

470

µF

C18

0.1

µF

C8

0.1

µF

C9 1

µF

C10 0.1

µF

R6

47 k

Ω

R2

90.1 k

Ω

C2

0.1

µF

R5

10 k

Ω

R3

12.1 k

Ω

R8

226

Ω

VDD

R7 8.66 k

Ω

R9

2 k

Ω

R4 330 k

Ω

L1

COEV

DXM1306−1R6

1.6

µH

VOUT

1.2 V

10 A

1

2

3

4

16

15

14

13

ILIM

VDD

BOOST

HDRV

KFF

RT

PGD

TPS40070PWP

TPS40071PWP

5

6

7

8

12

11

10

9

SW

LDRV

PGND

SGND

SS

VFB

COMP

+

C3

22 nF

C5

5.6 nF

5 V

+

−

PWP

C7

10 pF

C13

4.7 nF

Q2

Si7860DP

Q1

Si7860DP

+

+

C6

4.7 nF

C4 470 pF

−

LVBP

DBP

D1

BAT54

D2

BAT54

Note resistor across soft−start capacitor.



Diode D2 for operation below −10

°C



1.5

Ω

TPS40070

TPS40071

www.ti.com .................................................................................................................................................. SLUS582J – DECEMBER 2003 – REVISED APRIL 2009

Figure 16. 500 kHz, 5 V to 1.2 V with Improved High-Side Gate Drive

See Application Information section Boost Diodes.

Copyright © 2003–2009, Texas Instruments Incorporated

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