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TLV760 датащи(PDF) 12 Page - Texas Instruments |
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TLV760 датащи(HTML) 12 Page - Texas Instruments |
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12 / 24 page ![]() TLV760 IN OUT GND COUT CIN VIN = 6.5 V VOUT = 5 V 0.1 µF 0.1 µF Copyright © 2017, Texas Instruments Incorporated 12 TLV760 SNVSAV1A – JUNE 2017 – REVISED OCTOBER 2017 www.ti.com Product Folder Links: TLV760 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Application Information (continued) TLV760 integrates a rugged protection where the TJ is limited to 150°C. The maximum power dissipation depends on the ambient temperature and can be calculated using PD = (TJ – TA) / RθJA, for example, substituting the absolute maximum junction temperature, 150°C for TJ, 50°C for TA, and 275.2 °C/W for RθJA, the maximum power that can be dissipated is 363 mW. More power can be safely dissipated at lower ambient temperatures. Less power can be safely dissipated at higher ambient temperatures. The power dissipation can be increased by 3.6 mW for each °C below 50°C ambient. It must be derated by 3.6 mW for each °C above 50°C ambient. Proper heat sinking enables the safe dissipation of more power. 8.2 Typical Application Figure 18. Typical Appication for the 5-V Option 8.2.1 Design Requirements For typical TLV760 applications, use the parameters in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage 6.5 V Output voltage 5 V Output current 100 mA 8.2.2 Detailed Design Procedure The output for TLV76050 is internally set to 5 V. Input and output capacitors can be selected in accordance with the External Capacitors. Ceramic capacitances of 0.1 µF for both input and output are selected. See the Layout section for an example of how to PCB layout the TLV760 to achieve best performance. |
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