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PCF8883US/7EA/1 датащи(PDF) 11 Page - NXP Semiconductors |
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PCF8883US/7EA/1 датащи(HTML) 11 Page - NXP Semiconductors |
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11 / 35 page ![]() PCF8883 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet Rev. 4.1 — 14 September 2016 11 of 35 NXP Semiconductors PCF8883 Capacitive touch/proximity switch with auto-calibration 11. Static characteristics [1] Alternatively an external discharge resistor RC can be used (see Section 14). [2] Tested on sample basis. [3] Idle state is the steady state after completed power-on without any activity on the sensor plate and the voltage on the reservoir capacitor CCPC settled. [4] For reliability reasons, the average output current must be limited to 4.6 mA at 70 C and 3.0 mA at 85 C. [5] External ceramic chip capacitor recommended (see Figure 16). Table 6. Static characteristics VDD = 5 V, Tamb = +25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDD supply voltage 10 pF C i 40 pF; 40 C T amb +85 C [1] 3.0 - 9.0 V 10 pF C i 35 pF; 20 C T amb +85 C [2] 2.8 - 9.0 V VDD(INTREGD) internal regulated supply voltage 3.0 4.0 4.6 V V DD(INTREGD) internal regulated supply voltage variation regulator voltage drop - 10 50 mV IDD supply current idle state; fs = 1 kHz [3] VDD =5.0 V - 3 5 A VDD =3.0 V - 2.2 3.5 A Isink sink current internal constant current to VSS - 150 - nA VO output voltage on pin OUT; pull-up voltage 0 VDD 9.0 V IO output current P-MOS [4] 010 20 mA short circuit protection VO 0.6 V 20 30 50 mA Vsat saturation voltage on pin OUT; IO = +10 mA VDD = 5.0 V 0.1 0.2 0.4 V VDD = 3.0 V 0.1 0.3 0.5 V Cdec decoupling capacitance on pin VDD(INTREGD) [5] 100 - 220 nF VI(CPC) input voltage on pin CPC 0.6 - VDD(INTREGD) 0.5 V |
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