BC161 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =-60 V

Tamb =150

-100

µA

V( BR)CBO

∗ Collector-Base

Breakdown Volt age

(IE =0)

IC =-100

µA-60

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-10 mA

-60

V(BR)EBO

∗ Emitter-Base

Breakdown Volt age

(IC =0)

IE =-100

µA-5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-100 mA

IB =-10 mA

IC =-500 mA

IB =-50 mA

IC =-1 A

IB = -100 mA

-0. 1

-0.35

-0. 6

-1

VBE(on)

∗ Base-Emitter On

Voltage

IC =-1 A

VCE = -1 V

-1

-1.7

hFE

∗

DC Current G ain

IC =-100

µAVCE =-1 V

for BC161

for BC161 Gr. 6

for BC161 Gr. 10

for BC161 Gr. 16

IC =-100 mA

VCE =-1 V

for BC161

for BC161 Gr. 6

for BC161 Gr. 10

for BC161 Gr. 16

IC =-1 A

VCE =-1 V

for BC161

for BC161 Gr. 6

for BC161 Gr. 10

for BC161 Gr. 16

100

110

120

140

100

160

250

100

160

250

Transit ion F requency

IC =-50 mA

VCE =-10 V

MHz

CCBO

Collect or Base

Capacitance

IE =0

VCB =-20 V

f = 1MHz

CEBO

Emitt er Base

Capacitance

IC =0

VCB = -0.5 V

f = 1MHz

180

ton

Turn-on T ime

IC =-100 mA

IB1 = -5 mA

500

toff

Turn-off T ime

IC =-100 mA

IB1 =IB2 = -5 mA

650

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

BC161

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