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PARAMETER MEASUREMENT INFORMATION

VAB or VYZ

A/Y

B/Z

IA or IY

VB or VZ

VA or VY

VOS

VA + VB

2

VI

D

VCC

VY + VZ

2

or

IB or IZ

II

VAB or VYZ

49.9

Ω

3.32 k

Ω

3.32 k

Ω

_

+

-1 V

≤ Vtest ≤ 3.4 V

A/Y

B/Z

D

VOS

R1

24.9

Ω

A/Y

C3

2.5 pF

VOS(PP)

VOS(SS)

VOS

≈ 1.3 V

B/Z

A/Y

≈ 0.7 V

B/Z

D

R2

24.9

Ω

C1

1 pF

C2

1 pF

VTest

+

-

A/Y

B/Z

IOS

0 V or VCC

-1 V or 3.4 V

SN65MLVD201, SN65MLVD203

SN65MLVD206, SN65MLVD207

SLLS558C – DECEMBER 2002 – REVISED JANUARY 2007

Figure 1. Driver Voltage and Current Definitions

A.

All resistors are 1% tolerance.

Figure 2. Differential Output Voltage Test Circuit

A.

All input pulses are supplied by a generator having the following characteristics: tr or tf≤ 1 ns, pulse frequency = 500

kHz, duty cycle = 50 ± 5%.

B.

C1, C2 and C3 include instrumentation and fixture capacitance within 2 cm of the D.U.T. and are 20%.

C.

R1 and R2 are metal film, surface mount, 1%, and located within 2 cm of the D.U.T.

D.

The measurement of VOS(PP) is made on test equipment with a –3 dB bandwidth of at least 1 GHz.

Figure 3. Test Circuit and Definitions for the Driver Common-Mode Output Voltage

Figure 4. Driver Short-Circuit Test Circuit

Copyright © 2002–2007, Texas Instruments Incorporated

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