5.4 Thermal Information

THERMAL METRIC(1)

REF1112

UNIT

DBZ (SOT-23)

3 PINS

RθJA

Junction-to-ambient thermal resistance

219

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

99

°C/W

RθJB

Junction-to-board thermal resistance

79

°C/W

ψJT

Junction-to-top characterization parameter

6.7

°C/W

ψJB

Junction-to-board characterization parameter

79.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.5 Electrical Characteristics

VR = 1.25V, TA = +25°C, IREF = 1.2μA and CLOAD = 10nF, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VR

Reverse breakdown voltage

IREF = 1.2µA

1.2475

1.25

1.2525

V

–0.2%

0.2%

ΔVR

Temperature coefficient

1.2μA ≤ IREF ≤ 5mA, TA = 0°C to

+70°C

10

30

ppm/°C

1.5μA ≤ IREF ≤ 5mA, TA = –40°C to

+85°C

15

50

1.5μA ≤ IREF ≤ 5mA, TA = –40°C to

+125°C

15

IRMIN

Minimum operating current

1

1.2

µA

ΔVR/ΔIR

Reverse breakdown voltage change

with current

1.2μA ≤ IREF ≤ 5mA

100

150

ppm/mA

ZR

Reverse dynamic impedance

1.2μA ≤ IREF ≤ 5mA

0.135

0.2

Ω

eN

Low-frequency noise(1)

0.1Hz ≤ IREF ≤ 10Hz

25

μVPP

VHYST

Thermal hysteresis(2)

100

ppm

ΔVR

Long-term stability

+25°C ± 0.1°C

60

ppm/kHr

(1)

Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz.

(2)

Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the

specified temperature range, and returning to +25°C.

REF1112

SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024

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