LMH6715

SNOSA10C – MAY 2002 – REVISED APRIL 2013

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Frequency Response vs. VOUT

Figure 2.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

ESD Tolerance(3)

Human Body Model

2000V

Machine Model

150V

VCC

±6.75V

IOUT

See(4)

Common-Mode Input Voltage

±VCC

Differential Input Voltage

2.2V

Maximum Junction Temperature

+150°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering 10 sec)

+300°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical

Characteristics tables.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Human body model, 1.5k

Ω in series with 100pF. Machine model, 0Ω In series with 200pF.

(4)

The maximum output current (IOUT) is determined by device power dissipation limitations. See the POWER DISSIPATION section for

more details.

Operating Ratings

Thermal Resistance

Package

(

θJC)

(

θJA)

SOIC

65°C/W

145°C/W

Operating Temperature Range

−40°C to +85°C

Nominal Operating Voltage

±5V to ±6V

2

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