LM48312

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SNAS494D – JANUARY 2010 – REVISED MAY 2013

BUMP DESCRIPTION

Pin

Name

Description

A1

IN+

Non-Inverting Input

A2

SD

Active Low Shutdown Input. Connect to VDD for normal operation.

A3

OUTA

Non-Inverting Output

B1

VDD

Power Supply

B2

PVDD

H-Bridge Power Supply

B3

PGND

Ground

C1

IN-

Inverting Input

Gain Select:

GAIN = FLOAT: AV = 0dB

GAIN = VDD: AV = 3dB

C2

GAIN

GAIN = GND: AV = 6dB

GAIN = 20k

Ω to GND = 9dB

GAIN = 20k

Ω to VDD = 12dB

C3

OUTB

Inverting Output

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

− 0.3V to VDD +0.3V

Power Dissipation(4)

Internally Limited

ESD Rating(5)

2000V

ESD Rating(6)

200V

Junction Temperature

150°C

Thermal Resistance

θJA

70°C/W

Soldering Information

See AN-1112 (SNVA009) "DSBGA Wafer Level Chip Scale Package."

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at theAbsolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditionsindicate conditions at which the device is functional and the device should not be operated beyond such conditions. All

voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(3)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(4)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,

TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given inAbsolute Maximum Ratings,

whichever is lower.

(5)

Human body model, applicable std. JESD22-A114C.

(6)

Machine model, applicable std. JESD22-A115-A.

Operating Ratings

(1) (2)

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ TA ≤ +85°C

Supply Voltage (VDD, PVDD)

2.4V

≤ VDD ≤ 5.5V

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at theAbsolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditionsindicate conditions at which the device is functional and the device should not be operated beyond such conditions. All

voltages are measured with respect to the ground pin, unless otherwise specified.

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

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