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LM3526 датащи(PDF) 2 Page - Texas Instruments |
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LM3526 датащи(HTML) 2 Page - Texas Instruments |
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2 / 21 page ![]() LM3526 SNVS054E – FEBRUARY 2000 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Typical Operating Circuit and Connection Diagram Figure 1. LM3526-H Figure 2. LM3526-L 2 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LM3526 |
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