LM3444

SNVS682D – NOVEMBER 2010 – REVISED DECEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

VCC and GATE to GND

–0.3

14

V

ISNS to GND

–0.3

2.5

V

FILTER and COFF to GND

–0.3

7

V

COFF input current

60

mA

Continuous power dissipation(3)

Internally limited

TJ

Junction temperature

150

°C

Maximum lead temperature (soldering)

260

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 165°C (typical) and

disengages at TJ = 145°C (typical).

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±1250

C101(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

VCC

8

13

V

TJ

Junction temperature

–40

125

°C

6.4 Thermal Information

LM3444

THERMAL METRIC(1)

DGS (VSSOP)

D (SOIC)

UNIT

10 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

163.8

111.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

58.4

58.0

°C/W

RθJB

Junction-to-board thermal resistance

83.6

51.1

°C/W

ψJT

Junction-to-top characterization parameter

6.1

11.9

°C/W

ψJB

Junction-to-board characterization parameter

82.3

51.0

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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