AM83135-005 datasheet(1/4 Pages) STMICROELECTRONICS

номер детали	AM83135-005

подробное описание детали	RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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производитель	STMICROELECTRONICS [STMicroelectronics]

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August 23, 1996

S-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 400 x .400 2NL FL (S042)

hermetically sealed

.

REFRACTORY/GOLD METALL IZATION

.

EMITTER SITE BALLASTED

.

5:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 5.0 W MIN. WITH 5.2 dB GAIN

DESCRIPTION

The AM83135-005 device is a medium power sili-

con bipolar NPN transistor specifically designed

for S-Band radar pulsed driver applications.

This device is capable of operation over a wide

range of pulse widths. duty cycles and tempera-

tures, and can withstand a 5:1 output VSWR.

Low RF thermal resistance, refractory/gold metal-

lization, and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM83135-005 is supplied in the AMPAC

™

Hermetic Metal/Ceramic package with internal In-

put/Output matching circuitry, and is intended for

military and other high reliability applications.

PIN CONNECTION

BRANDI NG

83135-5

O RDER CODE

AM83135-005

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Un it

PDISS

P ower Dissipation*

(TC

≤ 100°C)

40

W

IC

Device Current*

1.8

A

VCC

Collector-Supply Voltage*

34

V

TJ

J un ction Te mperature ( Pul sed RF Operation)

250

°C

TSTG

S torage Temperature

− 65 to +200

°C

RTH(j-c)

J un ction-Ca s e Thermal R e sistance*

3.75

°C/W

*Applie s only to rated RF a mplifier oper ation

AM83135-005

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/4

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