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GD2X100MPS12N датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали GD2X100MPS12N
подробное описание детали  Silicon Carbide Schottky Diode
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GD2X100MPS12N датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCDM7057
eq GD2X100MPS12N
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
· Low forward voltage
· Low leakage current
· Isolated voltage to 2500 V
APPLICATIONS
· Switch-mode power supply
· Inverters/converters
· Motor controllers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitisve Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
(Per Leg/Per Device)
Tc=75°C,D=1
136 / 272
A
Tc=100°C,D=1
114 / 228
A
Tc=114°C,D=1
100 / 200
A
IFSM
Non-Repetitive Peak Forward Surge Current,
Half SineWave (Per Leg)
Tc=25°C,Tp=10ms
1000
A
Tc=150°C,Tp=10ms
800
A
IFRM
Repetitive Peak Forward Surge Current,
Half Sine Wave(Per Leg)
Tc=25°C,Tp=10ms
600
A
Tc=150°C,Tp=10ms
420
A
IF MAX
Non-Repetitive Peak Forward Surge Current
(Per Leg)
Tc=25°C,Tp=10us
5000
A
I2T
i2t Value (Per Leg)
Tc=25°C,Tp=10ms
5000
A2S
Ptot
Power Dissipation
(Per Leg/Per Device)
Tc=25°C
470 / 940
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.32
℃
/W


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