ISO7310C, ISO7310FC

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SLLSEI8D – JUNE 2014 – REVISED APRIL 2015

6 Specifications

6.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

Supply voltage(2)

VCC1 , VCC2

–0.5

6

V

Voltage (2)

IN, OUT

–0.5

VCC+0.5

(3)

V

Output current

IO

±15

mA

Junction temperature

TJ

150

°C

Storage temperature

Tstg

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal and are peak voltage values.

(3)

Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

MAX

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

Electrostatic

VESD

V

discharge

Charged device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

TYP

MAX

UNIT

VCC1, VCC2

Supply voltage

3

5.5

V

IOH

High-level output current

–4

mA

IOL

Low-level output current

4

mA

VIH

High-level input voltage

2

5.5

V

VIL

Low-level input voltage

0

0.8

V

tui

Input pulse duration

40

ns

1 / tui

Signaling rate

0

25

Mbps

TJ

(1)

Junction temperature

136

°C

TA

Ambient temperature

-40

25

125

°C

(1)

To maintain the recommended operating conditions for TJ, see the Thermal Information table.

6.4 Thermal Information

D PACKAGE

THERMAL METRIC(1)

UNIT

(8) PINS

RθJA

Junction-to-ambient thermal resistance

119.9

RθJCtop

Junction-to-case (top) thermal resistance

65.2

RθJB

Junction-to-board thermal resistance

61.3

°C/W

ψJT

Junction-to-top characterization parameter

19.3

ψJB

Junction-to-board characterization parameter

60.7

RθJCbot

Junction-to-case (bottom) thermal resistance

N/A

PD

Maximum power dissipation

34

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,

PD1

Power dissipation by Side-1

7.9

mW

Input a 12.5 MHz 50% duty-cycle square wave

PD2

Power dissipation by Side-2

26.1

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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