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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD19536KCS датащи(PDF) 3 Page - Texas Instruments |
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CSD19536KCS датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 80V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 2.1 2.5 3.2 V RDS(on) Drain-to-Source On-Resistance VGS = 6V, ID = 100A 2.5 3.2 mΩ VGS = 10V, ID = 100A 2.3 2.7 mΩ gfs Transconductance VDS = 10V, ID = 100A 307 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 50V, ƒ = 1MHz 9250 12000 pF Coss Output Capacitance 1820 2370 pF Crss Reverse Transfer Capacitance 47 61 pF RG Series Gate Resistance 1.4 2.8 Ω Qg Gate Charge Total (10V) VDS = 50V, ID = 100A 118 153 nC Qgd Gate Charge Gate to Drain 17 nC Qgs Gate Charge Gate to Source 37 nC Qg(th) Gate Charge at Vth 24 nC Qoss Output Charge VDS = 50V, VGS = 0V 335 nC td(on) Turn On Delay Time VDS = 50V, VGS = 10V, IDS = 100A, RG = 0Ω 14 ns tr Rise Time 8 ns td(off) Turn Off Delay Time 38 ns tf Fall Time 5 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.9 1.1 V Qrr Reverse Recovery Charge VDS= 50V, IF = 100A, di/dt = 300A/μs 548 nC trr Reverse Recovery Time 110 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.4 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD19536KCS SLPS485C – JANUARY 2014 – REVISED MAY 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD19536KCS |
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