CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features

• Ultra-low Qg and Qgd

• Low thermal resistance

• Avalanche rated

• Logic level

• Pb free terminal plating

• RoHS compliant

• Halogen free

• TO-220 plastic package

2 Applications

• DC-DC conversion

• Secondary side synchronous rectifier

• Motor control

3 Description

This 60V, 3.3mΩ, TO-220 NexFET™ power MOSFET

is designed to minimize losses in power conversion

applications.

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

60

V

Qg

Gate charge total (10V)

44

nC

Qgd

Gate charge gate-to-drain

6.9

nC

RDS(on)

Drain-to-source on-resistance

VGS = 4.5V

4.0

mΩ

VGS = 10V

3.3

mΩ

VGS(th)

Threshold voltage

1.8

V

Ordering Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD18542KCS

50

Tube

TO-220 Plastic

Package

Tube

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

60

V

VGS

Gate-to-source voltage

±20

V

ID

Continuous drain current (package limited)

200

A

Continuous drain current (silicon limited), TC

= 25°C

170

Continuous drain current (silicon limited), TC

= 100°C

120

IDM

Pulsed drain current (1)

400

A

PD

Power dissipation

200

W

TJ,

Tstg

Operating junction,

Storage temperature

–55 to 175

°C

EAS

Avalanche energy, single pulse

ID = 75A, L = 0.1mH, RG = 25Ω

281

mJ

(1)

Max RθJC = 0.6°C/W, pulse duration ≤100μs, duty cycle ≤1%

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

8

10

12

D007

TC = 25° C, ID = 100 A

TC = 125° C, ID = 100 A

RDS(on) vs VGS

Qg - Gate Charge (nC)

0

5

10

15

20

25

30

35

40

45

50

0

1

2

3

4

5

6

7

8

9

10

D004

ID = 100 A

VDS = 30 V

Gate Charge

CSD18542KCS

SLPS557A – JUNE 2015 – REVISED APRIL 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.