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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD18536KCS.B датащи(PDF) 3 Page - Texas Instruments |
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CSD18536KCS.B датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 1.4 1.8 2.2 V RDS(on) Drain-to-Source On-Resistance VGS = 4.5V, ID = 100A 1.7 2.2 mΩ VGS = 10V, ID = 100A 1.3 1.6 mΩ gfs Transconductance VDS = 6V, ID = 100A 312 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 30V, ƒ = 1MHz 8790 11430 pF Coss Output Capacitance 1410 1840 pF Crss Reverse Transfer Capacitance 39 51 pF RG Series Gate Resistance 0.7 1.4 Ω Qg Gate Charge Total (10V) VDS = 30V, ID = 100A 108 140 nC Qgd Gate Charge Gate-to-Drain 14 nC Qgs Gate Charge Gate-to-Source 18 nC Qg(th) Gate Charge at Vth 17 nC Qoss Output Charge VDS = 30V, VGS = 0V 230 nC td(on) Turn On Delay Time VDS = 30V, VGS = 10 V, IDS = 100A, RG = 0Ω 11 ns tr Rise Time 5 ns td(off) Turn Off Delay Time 24 ns tf Fall Time 4 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.9 1.0 V Qrr Reverse Recovery Charge VDS= 30V, IF = 100A, di/dt = 300A/μs 323 nC trr Reverse Recovery Time 86 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.4 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD18536KCS SLPS532C – JULY 2014 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18536KCS |
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