CSD18536KCS 60V N-Channel NexFET™ Power MOSFET

1 Features

• Ultra-low Qg and Qgd

• Low thermal resistance

• Avalanche rated

• Pb-free terminal plating

• RoHS compliant

• Halogen free

• TO-220 plastic package

2 Applications

• Secondary side synchronous rectifier

• Motor control

3 Description

This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET

is designed to minimize losses in power conversion

applications.

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

Qg

Gate Charge Total (10V)

108

nC

Qgd

Gate Charge Gate-to-Drain

14

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5V

1.7

mΩ

VGS = 10V

1.3

mΩ

VGS(th)

Threshold Voltage

1.8

V

Ordering Information

Device(1)

Package

Media

Qty

Ship

CSD18536KCS

TO-220 Plastic Package

Tube

50

Tube

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

200

A

Continuous Drain Current (Silicon limited),

TC = 25°C

349

Continuous Drain Current (Silicon limited),

TC = 100°C

247

IDM

Pulsed Drain Current (1)

400

A

PD

Power Dissipation

375

W

TJ,

Tstg

Operating Junction and

Storage Temperature Range

–55 to 175

°C

EAS

Avalanche Energy, single pulse

ID = 128A, L = 0.1mH, RG = 25Ω

819

mJ

(1)

Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%.

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

D007

TC = 25° C, ID = 100 A

TC = 125° C, ID = 100 A

RDS(on) vs VGS

Qg - Gate Charge (nC)

0

11

22

33

44

55

66

77

88

99

110

0

1

2

3

4

5

6

7

8

9

10

D004

ID = 100 A

VDS = 30 V

Gate Charge

CSD18536KCS

SLPS532C – JULY 2014 – REVISED MARCH 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.