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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD18511KCS датащи(PDF) 3 Page - Texas Instruments |
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CSD18511KCS датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0V, ID = 250μA 40 V IDSS Drain-to-source leakage current VGS = 0V, VDS = 32V 1 μA IGSS Gate-to-source leakage current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250μA 1.5 1.8 2.4 V RDS(on) Drain-to-source on-resistance VGS = 4.5V, ID = 100A 3.2 4.2 mΩ VGS = 10V, ID = 100A 2.1 2.6 gfs Transconductance VDS = 4V, ID = 100A 249 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0V, VDS = 20V, ƒ = 1MHz 4570 5940 pF Coss Output capacitance 454 591 pF Crss Reverse transfer capacitance 235 306 pF RG Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5V) VDS = 20V, ID = 100A 31 nC Qg Gate charge total (10V) 64 nC Qgd Gate charge gate-to-drain 9.7 nC Qgs Gate charge gate-to-source 17.9 nC Qg(th) Gate charge at Vth 7.4 nC Qoss Output charge VDS = 20V, VGS = 0V 20.7 nC td(on) Turnon delay time VDS = 20V, VGS = 10V, IDS = 100A, RG = 0Ω 8 ns tr Rise time 6 ns td(off) Turnoff delay time 17 ns tf Fall time 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100A, VGS = 0V 0.9 1.0 V Qrr Reverse recovery charge VDS= 20V, IF = 100A, di/dt = 300A/μs 62 nC trr Reverse recovery time 31 ns 4.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.8 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W www.ti.com CSD18511KCS SLPS548A – JULY 2017 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18511KCS |
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