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CSD17381F4 датащи(PDF) 4 Page - Texas Instruments

номер детали CSD17381F4
подробное описание детали  CSD17381F4 30-V N-Channel FemtoFET™ MOSFET
PDF  13 Pages
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CSD17381F4 датащи(HTML) 4 Page - Texas Instruments

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5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 5-1. Transient Thermal Impedance
0
1
2
3
4
5
6
7
8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VDS - Drain-to-Source Voltage (V)
VGS =8V
VGS =4.5V
VGS =2.5V
VGS =1.8V
G001
Figure 5-2. Saturation Characteristics
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
2.4
VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
Figure 5-3. Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Qg - Gate Charge (nC)
ID = 0.5A
VDS =15V
G001
Figure 5-4. Gate Charge
1
10
100
1000
0
3
6
9
12
15
18
21
24
27
30
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
Figure 5-5. Capacitance
CSD17381F4
SLPS411G – APRIL 2013 – REVISED JANUARY 2022
www.ti.com
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